快速发布采购 管理采购信息

FFA60UP30DNTU PDF Datasheet浏览和下载

型号.:
FFA60UP30DNTU
PDF下载:
下载PDF文件
内容描述:
[60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
文件大小:
5115 K
文件页数:
2 Pages
品牌Logo:
品牌名称:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
PCB Prototype
  • 供货商
  • IC型号
  • 厂家
  • 批号
  • 数量
  • 封装
  • 单价/备注
  • 操作
  • 深圳市旭弈鑫科技皇冠真人线上娱乐
  • FFA60UP30DNTU  
  • 客户群大族激光、中兴物联、国防科大、哈工大、中科院、中电五所、华为、富士康等 
  • 客户群航天科工/大族激光、国防科大、哈工大、中科院、中电五所、华为、富士康等 
  • 货到付款您放心买芯片找旭弈鑫 
  • 认证现货优势渠道货到付款12年信誉专业专注全新品质客户至上 
  • ██货到付款认证现货██
  • 向该货源信息发送询价信息
 浏览型号FFA60UP30DNTU的Datasheet PDF文件第2页 
FFA60UP30DNTU
Pb
Pb Free Plating Product
FFA60UP30DNTU
TO-3PB(TO-3PN)
Cathode(Bottom Side Metal Heatsink)
60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
APPLICATION
·
·
·
·
·
·
·
Freewheeling, Snubber, Clamp
Inversion Welder
PFC
Plating Power Supply
Ultrasonic Cleaner and Welder
Converter & Chopper
UPS
PRODUCT FEATURE
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
Internal Configuration
Base Backside
Anode
Anode
Cathode
GENERAL DESCRIPTION
FFA60UP30DNTU using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction
Storage temperatures
Symbol
V
RRM
I
F(AV)
I
FSM
I
FRM
Tj
Tstg
Test Conditions
Tc =110°C
Tc =25°C
Square wave, 20kHZ
Values
300
60
600
150
175
-55 to +175
°C
°C
A
Units
V
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Breakdown voltage
Blocking voltage
Forward voltage
(Per Diode)
Reverse leakage
current(Per Diode)
Reverse recovery
time(Per Diode)
Symbol
V
BR
,
V
R
V
F
Test Conditions
I
R
=100µA
I
F
=30A
I
F
=30A, Tj =125°C
V
R
= V
RRM
I
R
Tj=150°C, V
R
=300V
I
F
=0.5A, I
R
=1A, I
RR
=0.25A
I
F
=1A,V
R
=30V, di/dt =200A/us
35
26
Min
300
0.96
0.85
1.20
1.00
10
100
45
40
µA
V
Typ.
Max.
Units
t
rr
ns
Thermal characteristics
Junction-to-Case
Paramter
Symbol
R
θJC
Typ
0.8
℃/W
Units
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
博聚网